A Compact-Physics Framework for Modeling Charge Trapping Related Reliability Phenomena in MOS Devices
Comphy in a nutshell:
Metal-oxide-semiconductor (MOS) devices are affected by generation, transformation, and charging of oxide and interface defects.
These processes contribute to the device degradation and manifest itself in the form of bias temperature instability (BTI), random telegraph noise (RTN) and hysteresis. Comphy (short for compact-physics) is a Python framework developed by TU Wien and imec for the unified simulation of these charge trapping effects based on the non-radiative multi-phonon theory (NMP).
The applications of the framework cover the simulation of bias temperature instability for negative (NBTI) and positive (PBTI) gate voltages, hysteresis, lifetime extrapolation, extraction of defect parameters, AC stress with arbitrary signals and duty cycles, and gate stack engineering.
For a more complete description of the framework visit the Features section.