- Channel
- doping & workfunction
- material properties
- Gate Stack
- layer thicknesses
- permittivities
- band edges
- tunnel masses
- Defects
- density & location
- energy distribution
- material parameters

- Input:
- time dependent temperature T
- time dependent gate voltage V
_{G}

- Simulation Options:
- fast self-consistent mode (FSCP): accounts for the reduction in electric field due to oxide charges, but does not consider the impact on the occupancy of this reduction self-consistently.
- AC mode: fast computation of high-frequency long-term AC signals (trillions of cycles can be computed in seconds)
- fast and reproducible defect sampling on a grid
- random defect sampling with Monte-Carlo approach

- Output:
- threshold voltage shift \( \Delta V_\mathrm{th} \) as a function of time