
my_device = MOS_1D(
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- The first model BandGapModel_constant has a constant bandgap Eg(T) = Eg0.
- The second model BandGapModel_Tdep1 exhibits a linear temperature dependence Eg(T) = Eg0 + Eg1 * T
- The third model BandGapModel_Tdep2 has a more complicated temperature dependence Eg(T) = Eg0 + Eg1 * T + Eg2 * T² / (T + Edg) that matches the temperature dependence used on http://www.ioffe.ru/SVA/NSM/Semicond/Si/.
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h_model = CarrierModel_Holes_1(
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my_device.channel = Si
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my_device.insulating_layers.append(SiO2)
HfO2 = InsulatingLayer(
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my_device.insulating_layers.append(HfO2)
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my_device.gate = gate
Vfb0 = my_device.get_Vfb0(
x = np.linspace(
VB, CB, potential = my_device.get_VB_and_CB(
figure = plt.figure(figsize=(
plt.title(
plt.plot(x /
plt.plot(x /
plt.axhline(
xdata = [
ydata = [my_device.get_Ef_gate(
plt.plot(xdata, ydata,
plt.legend(
plt.xlabel(
plt.ylabel(
plt.tight_layout()
plt.grid()
plt.show()
